Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures

被引：1

作者：

Feng, SW ^{[1
]}

Cheng, YC ^{[1
]}

Chung, YY ^{[1
]}

Liu, CW ^{[1
]}

Mao, MH ^{[1
]}

Yang, CC ^{[1
]}

Lin, YS ^{[1
]}

Ma, KJ ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

ULTRAFAST PHENOMENA IN SEMICONDUCTORS VI | 2002年 / 4643卷

关键词：

carrier dynamics; localized states; InGaN/GaN quantum well; carrier transport;

D O I：

10.1117/12.470417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

引用

页码：169 / 172

页数：4

共 50 条

[41] Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
Chow, Yi Chao
Lee, Changmin
Wong, Matthew S.
Wu, Yuh-Renn
Nakamura, Shuji
DenBaars, Steven P.
Bowers, John E.
Speck, James S.
[J]. OPTICS EXPRESS, 2020, 28 (16) : 23796 - 23805
[42] Internal quantum efficiency of InGaN/GaN multiple quantum well
Wang Xue-Song
Ji Zi-Wu
Wang Hui-Ning
Xu Ming-Sheng
Xu Xian-Gang
Lu Yuan-Jie
Feng Zhi-Hong
[J]. ACTA PHYSICA SINICA, 2014, 63 (12)
[43] Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Christian, G. M.
Schulz, S.
Rappers, M. J.
Humphreys, C. J.
Oliver, R. A.
Dawson, P.
[J]. PHYSICAL REVIEW B, 2018, 98 (15)
[44] Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
Badcock, Tom J.
Hammersley, Simon
Watson-Parris, Duncan
Dawson, Phil
Godfrey, Mike J.
Kappers, Menno J.
McAleese, Clifford
Oliver, Rachel A.
Humphreys, Colin J.
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
[45] The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
Hammersley, S.
Watson-Parris, D.
Dawson, P.
Godfrey, M. J.
Badcock, T. J.
Kappers, M. J.
McAleese, C.
Oliver, R. A.
Humphreys, C. J.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (08)
[46] Photoconductivity of InGaN/GaN multiple quantum well heterostructures
Baranovskiy, M. V.
Glinskii, G. F.
[J]. 15TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB), 2013, 461
[47] Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures
Monemar, B
Bergman, JP
Pozina, G
Dalfors, J
Sernelius, BE
Holtz, PO
Amano, H
Akasaki, I
[J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS III, 1999, 3624 : 168 - 178
[48] Characterization of asymmetric GaN/InGaN multiple quantum well
Chen, Z. Z.
Qi, S. L.
Liu, P.
Yu, T. J.
Wang, C. D.
He, Z. K.
Tong, Y. Z.
Pan, Y. B.
Hao, M. S.
Zhang, G. Y.
[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S711 - S714
[49] Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures
Feng, SW
Cheng, YC
Liao, CC
Chung, YY
Liu, CW
Yang, CC
Lin, YS
Ma, KJ
Chyi, JI
[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (01): : 121 - 124
[50] Carrier distribution in (0001)InGaN/GaN multiple quantum well light-emitting diodes
David, Aurelien
Grundmann, Michael J.
Kaeding, John F.
Gardner, Nathan F.
Mihopoulos, Theodoros G.
Krames, Michael R.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (05)

← 1 2 3 4 5 →