Crystalline structure of solution-processed pentacene thin films

被引:6
|
作者
Natsume, Y. [1 ]
Minakata, T. [1 ]
Aoyagi, T. [1 ]
机构
[1] Asahi Kasei Corp, Shizuoka 4168501, Japan
关键词
Pentacene; Solution process; Field effect transistor; In-plane XRD; FIELD-EFFECT TRANSISTOR; X-RAY-DIFFRACTION; ORGANIC TRANSISTORS; IDENTIFICATION; PHASE; POLYMORPHS; MORPHOLOGY; SUBSTRATE; PRECURSOR;
D O I
10.1016/j.synthmet.2008.09.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the crystalline structure of solution-processed pentacene thin films, prepared without using any precursors or derivatives. In these films, two types of surface structure were observed: flat domains and tough domains. The flat domains exhibited higher field effect mobilities than the rough domains and were composed of two-dimensional plate-like domains of several hundred micrometers containing large crystallites. The in-plane structures of the solution-processed thin films were analyzed by grazing-incidence X-ray diffraction (GIXD). The in-plane two-dimensional mapping of the GIXD patterns reveals that the solution-processed pentacene thin films have a crystal structure similar to that reported by Campbell et al. [Acta Crystallogr. 15 (1962) 2891. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:338 / 342
页数:5
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