Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

被引：77
|
作者：
He, J. H. [1 ]
Chang, P. H.
Chen, C. Y.
Tsai, K. T.
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 106, Taiwan
来源：
NANOTECHNOLOGY | 2009年 / 20卷 / 13期
关键词：
GAN; MECHANISMS;
D O I：
10.1088/0957-4484/20/13/135701
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The resistivity of the ZnO NWs is measured to be 2.2 x 10(-2) Omega cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as similar to 10(8) have been fabricated and characterized.
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页数：5
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