Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55 μm

被引：7
|
作者：
Chouaib, H.
Chauvin, N.
Bru-Chevallier, C.
Monat, C.
Regreny, P.
Gendry, M.
机构：
[1] Inst Natl Sci Appl, CNRS, UMR 5511, Phys Mat Lab, F-69621 Villeurbanne, France
[2] CNRS, UMR 5512, Lab Elect Optoelect & Microsyst, Ecole Cent Lyon, F-69134 Ecully, France
来源：
APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 01期
关键词：
photoreflectance spectroscopy; quantum sticks; photoluminescence; molecular beam;
D O I：
10.1016/j.apsusc.2006.05.081
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoreflectance (PR) measurements are performed as a function of temperature on self-organized InAs/InP(001) quantum sticks (QSs) grown by solid-source molecular beam epitaxy. With a very weak excitation power, three PR transition energies are arising and associated with the ground state and two excited states, respectively, in good agreement with both photoluminescence (PL) and PL excitation measurements. The temperature dependence of the PR transition energies is in good agreement with the Bose-Einstein behavior. From PL analysis of these InAs/InP QSs, the ground state was assumed to be partially filled because of the residual n-type doping of the InP barrier layers. The PR spectra analysis allows us to further confirm this assumption, considering mainly the relative PR intensity of the different transitions, as well as the Franz Keldysh oscillations (FKO) above the InP bandgap. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：90 / 94
页数：5
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