High-Speed Gate Driver Design for Testing and Characterizing WBG Power Transistors

被引：0

作者：

Badawi, Nasser ^{[1
]}

Knieling, Philipp ^{[1
]}

Dieckerhoff, Sibylle ^{[1
]}

机构：

[1] Tech Univ Berlin, Power Elect Res Grp, D-10587 Berlin, Germany

来源：

2012 15TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE/PEMC) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Requirements and design considerations for driving wide-bandgap (WBG) power semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) devices are discussed in this paper. The main purpose is the development of a reliable gate drive circuit for these WBG devices which must be capable to operate at high switching frequencies. Conventional and resonant gate drivers are designed providing a solution for high voltage applications up to 1000V. Based on exemplary measurements of SiC devices, the performance of the gate drivers is compared with regard to power consumption and high speed switching.

引用

页数：6

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