High-Speed, High-Reliability GaN Power Device with Integrated Gate Driver

被引：0

作者：

Tang, Gaofei ^{[1
]}

Kwan, M. -H. ^{[2
]}

Zhang, Zhaofu ^{[1
]}

He, Jiabei ^{[1
]}

Lei, Jiacheng ^{[1
]}

Su, R. -Y. ^{[2
]}

Yao, F. -W. ^{[2
]}

Lin, Y. -M. ^{[2
]}

Yu, J. -L. ^{[2
]}

Yang, Thomas ^{[2
]}

Chern, Chan-Hong ^{[2
]}

Tsai, Tom ^{[2
]}

Tuan, H. C. ^{[2
]}

Kalnitsky, Alexander ^{[2
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

[2] Taiwan Semicond Mfg Co Ltd, Analog Power & Specialty Technol Div, Hsinchu, Taiwan

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

Double pulse tester; driving capability; gate driver; GaN power switch; rail-to-rail output; slew rate; CIRCUITS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current source that enables high current driving capability during the entire turn-on process and rail-to-rail output. The GaN power transistor with integrated gate driver was characterized up to 300 V/15 A switching operations using a double pulse tester, and exhibits suppressed gate ringing and fast switching speed. The peak drain voltage slew rate dV/dt is above 125 V/ns during turn-on, and 336 V/ns during turn-off.

引用

页码：76 / 79

页数：4

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