Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy

被引：35

作者：

He, Liang ^{[1
]}

Kou, Xufeng ^{[1
]}

Lang, Murong ^{[1
]}

Choi, Eun Sang ^{[2
]}

Jiang, Ying ^{[3
,4
]}

Nie, Tianxiao ^{[1
]}

Jiang, Wanjun ^{[1
]}

Fan, Yabin ^{[1
]}

Wang, Yong ^{[3
,4
]}

Xiu, Faxian ^{[5
,6
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Natl High Magnet Field Lab, Tallahassee, FL 32310 USA

[3] Zhejiang Univ, Dept Mat Sci & Engn, Ctr Electron Microscopy, Hangzhou 310027, Peoples R China

[4] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[5] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[6] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

来源：

SCIENTIFIC REPORTS | 2013年 / 3卷

关键词：

TOPOLOGICAL INSULATOR; QUANTUM OSCILLATIONS; DIRAC CONE; BI2SE3; TRANSPORT; BI2TE3;

D O I：

10.1038/srep03406

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The discovery of topological insulators (TIs) has led to numerous exciting opportunities for studying topological states of quantum physics and for exploring spintronic applications due to the new physics arising from their robust metallic surface states. Here, we report the high-quality topological insulator (BixSb1-x)(2)Te-3 thin films using a single van der Waals GaSe buffer layer. As a result, ultra-low surface carrier density of 1.3 x 10(12) cm(-2) and a high Hall mobility of 3100 cm(2)/Vs have been achieved for (Bi0.53Sb0.47)(2)Te-3. The high-quality films enable us to observe quantum oscillations associated with the top and bottom surface states and to manipulate the Dirac electrons and bulk holes' conduction properties. The observation of the two surface states may lead to a path towards the implementation of TIs in spintronics.

引用

页数：6

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