A facilely one pot low temperature synthesis of novel Pt doped PbS nanopowders and their characterizations for optoelectronic applications

被引:21
|
作者
Shkir, Mohd [1 ]
Yahia, I. S. [1 ]
AlFaify, S. [1 ]
机构
[1] King Khalid Univ, Coll Sci, Dept Phys, AFMOL, Abha 61413, Saudi Arabia
关键词
Lead sulfide; Structural properties; Optical properties; Dielectric properties; Electrical properties; SULFIDE THIN-FILMS; OPTICAL-PROPERTIES; RAMAN-SCATTERING; ZNO NANORODS; NANOPARTICLES; NANOSTRUCTURES; NANOCRYSTALS; ENHANCEMENT; NANOSHEETS; GROWTH;
D O I
10.1016/j.molstruc.2019.04.099
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Different concentrations of Pt doped PbS nanostructures synthesis has been attained facilely by chemical route. X-ray diffraction (XRD) and FT-Raman spectroscopy analyses confirms the structure. After close inspection and indexing of diffraction peaks, the absence of additional peak owing to any contamination or free Pt in final products was confirmed. XRD data was further used to evaluate the lattice constants, crystallite size, density and strain to see the effect of Pt on these. Calculated lattice parameters confirm the single cubic phase, which was in correlation with vibrational modes analysis. The crystallite size was calculated in range from 9 to 11 nm. For further confirmation of Pt doping and its homogeneity in final product the EDX/SEM mapping was carried out and approved the homogeneous presence of Pt in PbS. SEM study revealed that the morphology is changing from nanoparticles (NPs) to nanosheets (NSs). Diffused reflectance spectra (DRS) were measured for powdered samples and energy gap was estimated up to 1.32 eV. Photoluminescence spectra was recorded and shows an intense green and broad red emission bands at 518 and 700 nm, correspondingly. The values of dielectric constant are found in range of 18-28. Total ac electrical conductivity is rising with applied frequency. The energy gap value suggest the application of synthesized Pt:PbS NPs and NSs in solar cell. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:68 / 75
页数:8
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