AlGaN/GaN HEMT reliability assessment by means of low frequency noise measurements

被引：14
|
作者：
Sozza, A.
Curutchet, A.
Dua, C.
Malbert, N.
Labat, N.
Touboul, A.
机构：
[1] Alcatel Thales, Lab III V, F-91461 Marcoussis, France
[2] Univ Padua, DEI, I-35131 Padua, Italy
[3] Univ Bordeaux 1, IXL, F-33405 Talence, France
[4] IEMN, F-59652 Villeneuve Dascq, France
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2006.07.062
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Although impressive results have been published for GaN-based transistors in a large frequency range reliability demonstration is becoming an important subject of concern. In this article the conditions of a long term DC life test is presented and a detailed description of pre- and post-test characterization by means of Low Frequency Noise measurements (LFN) is discussed. The transistor parameters (I-DSS, R-on, V-p) and the drain noise spectra presented an evolution strictly related to the biasing point during the stress. This demonstrates that LFN measurement is a useful tool to investigate degradation in GaN HEMTs.
引用
收藏
页码：1725 / 1730
页数：6
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