Characterization of AlGaN/GaN based HEMT for low noise and high frequency application

被引：10

作者：

Dubey, Shashank Kumar ^{[1
]}

Mishra, Meena ^{[2
]}

Islam, Aminul ^{[1
]}

机构：

[1] Birla Inst Technol, Dept ECE, Mesra, Ranchi 835215, Jharkhand, India

[2] DRDO, Solid State Phys Lab SSPL, New Delhi, Delhi, India

来源：

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2022年 / 35卷 / 01期

关键词：

AlGaN; GaN HEMT; current gain; maximum oscillation frequency; noise parameters; unilateral power gain; P-GAN; RESISTANCE; FIGURE;

D O I：

10.1002/jnm.2932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a detailed study on AlGaN/GaN based HEMT for DC (such as I-D - V-DS, I-D - V-GS and g(m)), RF (such as cut off frequency, f(T) and maximum oscillation frequency, f(MAX)) and noise parameters (such as minimum noise figure (NFmin), noise resistance (R-n) and optimum reflection coefficient ( CYRILLIC CAPITAL LETTER GHE(opt))). AlGaN/GaN based HEMT having gate length 250 nm and 500 nm have been simulated and verified on the Silvaco TCAD tool.

引用

页数：12

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