Exciton diffusion in monolayer and bulk MoSe2

被引：110

作者：

Kumar, Nardeep ^{[1
]}

Cui, Qiannan ^{[1
]}

Ceballos, Frank ^{[1
]}

He, Dawei ^{[2
]}

Wang, Yongsheng ^{[2
]}

Zhao, Hui ^{[1
]}

机构：

[1] Univ Kansas, Dept Phys & Astron, Lawrence, KS 66045 USA

[2] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China

来源：

NANOSCALE | 2014年 / 6卷 / 09期

基金：

北京市自然科学基金; 美国国家科学基金会;

关键词：

VALLEY POLARIZATION; HETEROSTRUCTURES; SEMICONDUCTORS; GRAPHENE; PHOTOLUMINESCENCE; PHOTOTRANSISTORS; EXFOLIATION; GENERATION; EMISSION; CARRIERS;

D O I：

10.1039/c3nr06863c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The exciton dynamics in monolayer and bulk MoSe2 samples are studied by transient absorption microscopy with a high spatiotemporal resolution. Excitons are injected with a point-like spatial distribution using a tightly focused femtosecond pulse. The spatiotemporal dynamics of these excitons are monitored by measuring transient absorption of a time-delayed and spatially scanned probe pulse. We obtain the exciton diffusion coefficients of 12 +/- 3 and 19 +/- 2 cm(2) s(-1) and exciton lifetimes of 130 +/- 20 and 210 +/- 10 ps in the monolayer and bulk samples, respectively. These values are useful for understanding excitons and their interactions with the environment in these structures and potential applications of MoSe2 in optoelectronics and electronics.

引用

页码：4915 / 4919

页数：5

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