Electrical, optical and morphological properties of chemically deposited nanostructured tungsten disulfide thin films

Nanocrystalline tungsten disulfide thin films have been deposited on non-conducting glass substrates using triethanolamine bath. The film samples were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy and thermoelectric techniques. The crystalline phase of the deposited sample was of hexagonal wurtzite-type. The optical band gap energy of the sample was found to be 1.46 eV. The electrical conductivity of the film sample was found to be in the order of 10(-3) (Omega cm)(-1). Thermoelectric measurement showed n-type of conductivity. The configuration of fabricated cell is n-WS2 vertical bar NaI (2 M) + I-2 (1 M) vertical bar C-(graphite). The efficiency of the cell was found to be 1.29%.