Electrical, optical and morphological properties of chemically deposited nanostructured tungsten disulfide thin films

被引：17
|
作者：
Chate, P. A. [1 ]
Sathe, D. J. [2 ]
Hankare, P. P. [3 ]
机构：
[1] JSM Coll, Dept Chem, Alibag 402201, India
[2] KITs Coll Engn, Dept Chem, Kolhapur, Maharashtra, India
[3] Shivaji Univ, Dept Chem, Solid State Res Lab, Kolhapur 416004, Maharashtra, India
来源：
APPLIED NANOSCIENCE | 2013年 / 3卷 / 01期
关键词：
Chalcogenides; Electronic material; Thin films; Nanomaterial;
D O I：
10.1007/s13204-012-0073-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Nanocrystalline tungsten disulfide thin films have been deposited on non-conducting glass substrates using triethanolamine bath. The film samples were characterized by X-ray diffraction, scanning electron microscopy, optical spectroscopy and thermoelectric techniques. The crystalline phase of the deposited sample was of hexagonal wurtzite-type. The optical band gap energy of the sample was found to be 1.46 eV. The electrical conductivity of the film sample was found to be in the order of 10(-3) (Omega cm)(-1). Thermoelectric measurement showed n-type of conductivity. The configuration of fabricated cell is n-WS2 vertical bar NaI (2 M) + I-2 (1 M) vertical bar C-(graphite). The efficiency of the cell was found to be 1.29%.
引用
收藏
页码：19 / 23
页数：5
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