Triple junction controlled grain growth in two-dimensional polycrystals and thin films: Self-similar growth laws and grain size distributions

被引：22

作者：

Streitenberger, Peter ^{[1
]}

Zoellner, Dana ^{[1
]}

机构：

[1] Univ Magdeburg, Inst Expt Phys, D-39016 Magdeburg, Germany

来源：

ACTA MATERIALIA | 2014年 / 78卷

关键词：

Grain growth; Triple junctions; Grain size distributions; Computer simulations; Thin films; MICROSTRUCTURE EVOLUTION; REDUCED MOBILITY; KINETICS; MOTION; STAGNATION; SIMULATION; PUZZLE; MODEL;

D O I：

10.1016/j.actamat.2014.06.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Triple junction controlled grain growth in two-dimensional nanocrystalline polycrystals is modeled by attributing to each structural feature of a polygonal grain a finite mobility. By considering grain growth as a dissipative process that is driven by the reduction of the Gibbs free interface energy, a general grain evolution equation is derived that separates into two types of possible self-similar growth kinetics. For the case of pure triple junction drag the influence of finite triple junction mobilities on metrical and topological properties is studied. Analytical expressions of the self-similar grain size distribution are derived, which compare very well with results from the modified Monte Carlo Potts model and front-tracking vertex dynamic simulations, taking into account size effects in triple junction limited grain growth. In addition, the analytical grain size distributions are used for a theoretical description of experimental data obtained in nanocrystalline thin films upon annealing. (C) 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：114 / 124

页数：11

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