Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy

被引：49

作者：

Pozina, G ^{[1
]}

Bergman, JP ^{[1
]}

Paskova, T ^{[1
]}

Monemar, B ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期

关键词：

D O I：

10.1063/1.125557

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent time-resolved photoluminescence measurements were performed on thick GaN layers grown by hydride vapor-phase epitaxy on Al2O3 substrates. Radiative lifetimes were determined for the neutral-donor-bound exciton with position at 3.478 eV and for two neutral-acceptor-bound excitons at 3.473 and 3.461 eV. We report a value of 3600 ps for the radiative lifetime of the acceptor-bound exciton transition at 3.461 eV. The dominant mechanism responsible for the nonradiative recombination of the bound excitons is shown to be connected with dissociation of the bound excitons into free excitons. (C) 1999 American Institute of Physics. [S0003-6951(99)00752-4].

引用

页码：4124 / 4126

页数：3

共 50 条

[41] Erbium energy levels in GaN grown by hydride vapor phase epitaxy
Yan, Y. Q.
Smith, T. B.
Li, J.
Lin, J. Y.
Jiang, H. X.
AIP ADVANCES, 2020, 10 (12)
[42] Properties of freestanding GaN substrates grown by hydride vapor phase epitaxy
Lee, K
Auh, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (1AB): : L13 - L15
[43] Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy
Yu, PW
Park, CS
Kim, ST
JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1692 - 1695
[44] Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
Skromme, BJ
Jayapalan, J
Vaudo, RP
Phanse, VM
APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2358 - 2360
[45] Photoluminescence of GaN : Mg grown by metalorganic vapor-phase epitaxy (MOVPE)
Lim, PH
Schineller, B
Schön, O
Heime, K
Heuken, M
JOURNAL OF CRYSTAL GROWTH, 1999, 205 (1-2) : 1 - 10
[46] Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
Yamaguchi, S
Kariya, M
Nitta, S
Takeuchi, T
Wetzel, C
Amano, H
Akasaki, I
JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) : 7682 - 7688
[47] Photoluminescence of GaN:Mg grown by metalorganic vapor-phase epitaxy (MOVPE)
Institut für Halbleitertechnik, RWTH-Aachen, Templergraben 55, D-52056 Aachen, Germany
不详
J Cryst Growth, 1 (1-10):
[48] GaN nanorods doped by hydride vapor-phase epitaxy: Optical and electrical properties
Kim, HM
Cho, YH
Kang, TW
ADVANCED MATERIALS, 2003, 15 (03) : 232 - +
[49] VAPOR-PHASE EPITAXY OF GAN LAYERS
LIU, SS
STEVENSON, DA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C262 - C262
[50] Raman and infrared spectroscopy of GaN nanocrystals grown by chloride-hydride vapor-phase epitaxy on oxidized silicon
Bessolov, VN
Zhilyaev, YV
Konenkova, EV
Fedirko, VA
Zahn, DRT
SEMICONDUCTORS, 2003, 37 (08) : 940 - 943

← 1 2 3 4 5 →