Nitridation of Metalorganic-Chemical-Vapor-Deposited Al2O3 Gate Dielectrics by NH3 Annealing

被引：1

作者：

He, G. ^{[1
,2
]}

Chen, X. F. ^{[1
]}

Zhang, J. W. ^{[1
]}

Zhang, M. ^{[1
]}

Chen, X. S. ^{[2
]}

Sun, Z. Q. ^{[1
]}

Liu, M. ^{[3
]}

Lv, J. G. ^{[4
]}

Cui, J. B. ^{[5
]}

机构：

[1] Anhui Univ, Sch Phys & Mat Sci, Hefei 230039, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China

[4] Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China

[5] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA

来源：

SCIENCE OF ADVANCED MATERIALS | 2014年 / 6卷 / 05期

基金：

中国国家自然科学基金;

关键词：

High-k Gate Dielectrics; Thermal Stability; Metalorganic Chemical Vapor Deposition; Interfacial Properties; THERMAL-STABILITY; ELECTRICAL-PROPERTIES; FILMS; SPECTROSCOPY; SURFACE; HFO2; SI; OXIDATION; SI(100); OXIDE;

D O I：

10.1166/sam.2014.1855

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Al2O3 high-k gate dielectric has been deposited onto a Si substrate by metalorganic-chemical-vapor-deposition (MOCVD) and then nitridized by NH3 annealing in a temperature range of 500-1000 degrees C. The effect of annealing temperature on the interfacial stability, morphology, and electrical properties of Al2O3/Si gate stack has been investigated. AFM analysis has indicated that uniform and smooth surface has been obtained by NH3 annealing. XPS measurements have confirmed that NH3 annealing leads to the formation of SiON interfacial layer and the nitridation of Al2O3 surface layer. Moreover, a decrease in band gap and valence band maximum with increasing annealing temperature has been detected. In addition, an optimized electrical performance based on Au/Al2O3/Si/AI CMOS capacitor has been obtained.

引用

页码：915 / 922

页数：8

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