Impurity distribution in InSb single crystals

被引：1

作者：

Hui, MJ

Beatty, K

Blackmore, K

Jackson, K

机构：

[1] Dept. of Mat. Sci. and Engineering, University of Arizona, Tucson, AZ 85712

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期

关键词：

crystal growth; impurity distribution; InSb; single crystal;

D O I：

10.1016/S0022-0248(96)01112-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The distribution of cadmium (Cd) dopant in InSb single crystals grown by the vertical Bridgman technique has been studied. The distribution coefficient was obtained by fitting a numerical solution of the diffusion equation to the dopant profiles along growth direction. Measurement of the actual growth rate of the crystal using the Peltier demarcation technique showed a large difference between the actual growth rate of the crystal and the specimen translation rate (nominal growth rate). This difference strongly influenced the dopant distribution.

引用

页码：245 / 249

页数：5

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