Impurity distribution in InSb single crystals

被引：1
|
作者：
Hui, MJ
Beatty, K
Blackmore, K
Jackson, K
机构：
[1] Dept. of Mat. Sci. and Engineering, University of Arizona, Tucson, AZ 85712
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 174卷 / 1-4期
关键词：
crystal growth; impurity distribution; InSb; single crystal;
D O I：
10.1016/S0022-0248(96)01112-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The distribution of cadmium (Cd) dopant in InSb single crystals grown by the vertical Bridgman technique has been studied. The distribution coefficient was obtained by fitting a numerical solution of the diffusion equation to the dopant profiles along growth direction. Measurement of the actual growth rate of the crystal using the Peltier demarcation technique showed a large difference between the actual growth rate of the crystal and the specimen translation rate (nominal growth rate). This difference strongly influenced the dopant distribution.
引用
收藏
页码：245 / 249
页数：5
相关论文
共 50 条
12345