Field-induced cathodic oxidation of low-energy Ar-ion-bombarded silicon by AFM

被引：2

作者：

Kim, Hyunsook ^{[1
]}

Kim, Sung-Kyoung ^{[1
]}

Kim, Kye-Ryung ^{[2
]}

Lee, Haiwon ^{[1
]}

机构：

[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea

[2] Korea Atom Energy Res Inst, Proton Engn Frontier Project, Taejon 305353, South Korea

来源：

ULTRAMICROSCOPY | 2009年 / 109卷 / 08期

关键词：

AFM lithography; Low-energy Ar-ion beam; Giant oxide pattern; ATOMIC-FORCE MICROSCOPE; SCANNED PROBE OXIDATION; HYDROGEN-PASSIVATED SILICON; INERT ORGANIC-SOLVENTS; ANODIZATION LITHOGRAPHY; LOCAL OXIDATION; NANO-OXIDATION; SPACE-CHARGE; KINETICS; NANOLITHOGRAPHY;

D O I：

10.1016/j.ultramic.2009.03.017

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Local oxidation by atomic force microscopy (AFM) was studied on a 3 keV Argon (Ar)-ion-bombarded silicon (Si) (100) substrate. Giant oxide features higher than 100 nm were patterned by applying positive voltages to the tip with respect to the substrate. To analyze the growth rate of oxide features, we used the power-of-time law model. The growth rate of oxide features on an Ar-ion beam-bombarded silicon surface was increased approximately 1.8-fold compared to a common silicon surface. Furthermore, we obtained that the heights of oxide features increased as the exposure time to the tip decreased and the scan area increased. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1085 / 1088

页数：4

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