High overtone bulk acoustic resonators built using aluminum nitride thin films deposited onto AT-cut quartz plates

被引:0
|
作者
Masson, J. [1 ]
Gachon, D. [1 ]
Robert, L. [1 ]
Bazin, N. [1 ]
Friedt, J. -M. [1 ]
Martin, G. [1 ]
Alzuaga, S. [1 ]
Rodolphe, R. [1 ]
Guichardaz, B. [1 ]
Ballandras, S. [1 ]
机构
[1] UFC, FEMTO ST, CNRS ENSMM UTBM UMR 6174, Dept LPMO, 32 Ave Observ, F-25044 Besancon, France
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Compact high stability frequency sources devoted to on-board applications may be stabilized by acousto-electric devices such as SAW and BAW resonators. Many architectures have been proposed to improve the quality factor of such devices which directly influences the phase noise figures of the oscillator. However, the quality factor-frequency products of such acousto-electric devices mainly built on quartz hardly overcome 10(13), which remains rather small compared to the intrinsic mechanical quality factor of the material. In the 80's, Lakin et al. have emphasized the capability of High overtone Bulk Acoustic Resonator (HBAR) to present high quality factors at frequencies in the GHz range. In this paper, we characterize the resonance properties of HBAR built on thick AT-cut quartz plates excited by a C-oriented aluminum nitride thin films deposited atop quartz, examining its behaviour versus temperature and its capability to stabilize a Colpitts oscillator.
引用
收藏
页码:835 / +
页数:2
相关论文
共 50 条
  • [41] Toward Band n78 Shear Bulk Acoustic Resonators Using Crystalline Y-Cut Lithium Niobate Films With Spurious Suppression
    Yandrapalli, Soumya
    Eroglu, Seniz Kucuk
    Mateu, Jordi
    Collado, Carlos
    Plessky, Victor
    Villanueva, Luis Guillermo
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2023, 32 (04) : 327 - 334
  • [42] GHz High-Q Lateral Overmoded Bulk Acoustic-Wave Resonators Using Epitaxial SiC Thin Film
    Gong, Songbin
    Kuo, Nai-Kuei
    Piazza, Gianluca
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2012, 21 (02) : 253 - 255
  • [43] Synthesis and surface acoustic wave property of aluminum nitride thin films fabricated on silicon and diamond substrates using the sputtering method
    Ishihara, M
    Manabe, T
    Kumagai, T
    Nakamura, T
    Fujiwara, S
    Ebata, Y
    Shikata, S
    Nakahata, H
    Hachigo, A
    Koga, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (08): : 5065 - 5068
  • [44] Spurious Suppression without Energy Dissipation in Aluminum-Nitride-Based Thin-Film Bulk Acoustic Resonator Using Thin Ring on Electrode Edge
    Hara, Motoaki
    Kuwano, Hiroki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (07)
  • [45] Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering
    Liu, Wei-Sheng
    Wu, Sui-Hua
    Balaji, G.
    Huang, Li-Cheng
    Chi, Chung-Kai
    Kuo, Hsing-Chun
    VACUUM, 2024, 227
  • [46] GHZ-BAND SURFACE-ACOUSTIC-WAVE DEVICES USING ALUMINUM NITRIDE THIN-FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE DUAL ION-BEAM SPUTTERING
    OKANO, H
    TANAKA, N
    SHIBATA, K
    NAKANO, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B): : 4052 - 4056
  • [47] Preparation of highly textured Mo and AIN films using a Ti seed layer for integrated high-Q film bulk acoustic resonators
    Lee, HC
    Park, JY
    Lee, KH
    Bu, JU
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1127 - 1133
  • [48] High-Q thin film bulk acoustic wave resonator using highly <111>-oriented aluminum electrode
    Ohara, R
    Sano, K
    Yanase, N
    Yasumoto, T
    Kawakubo, T
    Itaya, K
    2005 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4, 2005, : 206 - 209
  • [49] High coupling piezoelectric thin films of Pb(Zr,Ti)O3-based ternary perovskite compounds for GHz-range film bulk acoustic resonators
    Yamauchi, N.
    Shirai, T.
    Yoshihara, T.
    Hayasaki, Y.
    Ueda, T.
    Matsushima, T.
    Wasa, K.
    Kanno, I.
    Kotera, H.
    APPLIED PHYSICS LETTERS, 2009, 94 (17)
  • [50] High Stability Performance of Quinary Indium Gallium Zinc Aluminum Oxide Films and Thin-Film Transistors Deposited Using Vapor Cooling Condensation Method
    Yung-Hao Lin
    Ching-Ting Lee
    Journal of Electronic Materials, 2017, 46 : 5209 - 5214