user

A structural study of electrodeposited Fe on n-GaAs(001)

被引：15
|
作者：
Svedberg, E. B. [1 ]
Mallett, J. J.
Bendersky, L. A.
Roy, A. G.
Egelhoff, W. F., Jr.
Moffat, T. P.
机构：
[1] NIST, Gaithersburg, MD 20899 USA
[2] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 12期
关键词：
D O I：
10.1149/1.2353782
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The microstructure of Fe films electrodeposited onto n-GaAs(001) from FeCl2 and FeSO4-(NH4)(2)SO4 electrolytes was examined by X-ray and electron diffraction. Symmetrical theta-2 theta X-Ray diffraction from films deposited from chloride solutions indicates a dominant (001) texture with the presence of additional minority orientations. In contrast, deposition from an ammonium sulfate electrolyte yields films that only exhibit (001) scattering in the theta-2 theta geometry. Transmission electron microscopy (TEM) cross-sectional images of films grown in chloride solutions reveal intermittent cube-on-cube epitaxy that is also evident in plan view TEM dark field images. Interestingly, X-ray pole figure measurements for all specimens examined reveal an additional (221) orientation that is undetectable by symmetric theta-2 theta diffraction. The (221) oriented material most likely derives from twinning of (001) oriented grains during growth. (c) 2006 The Electrochemical Society.
引用
收藏
页码：C807 / C813
页数：7
相关论文
共 50 条
  • [31] Interfacial superstructure of AlN/n-GaAs(001) system fabricated by metalorganic chemical vapor deposition
    Akimoto, Koichi
    Hirosawa, Ichiro
    Mizuki, Jun'ichiro
    Fujieda, Shinji
    Matsumoto, Yoshishige
    Matsui, Junji
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08):
  • [32] Development of an optically gated Fe/n-GaAs spin-polarized transistor
    Kim, J. Y.
    Samiepour, M.
    Jackson, E.
    Ryu, J.
    Iizasa, D.
    Saito, T.
    Kohda, M.
    Nitta, J.
    Beere, H. E.
    Ritchie, D. A.
    Hirohata, A.
    [J]. PHYSICAL REVIEW B, 2022, 106 (13)
  • [33] XPS study of chemically sulphur-passivated n-GaAs
    Ghita, R. V.
    Negrila, C. C.
    Ungureanu, F.
    Logofatu, C.
    [J]. OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2010, 4 (11): : 1736 - 1739
  • [34] Improvement in electrical properties at an n-GaAs/n-GaAs regrown interface using ammonium sulfide treatment
    Furuhata, N
    Shiraishi, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01): : 10 - 14
  • [35] PHOTOLUMINESCENCE STUDY OF CD-ION IMPLANTED N-GAAS
    AOKI, K
    GAMO, K
    MASUDA, K
    NAMBA, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (01) : 145 - 149
  • [36] Control of the Schottky barrier height in epitaxial magnetic MnAs/n-GaAs and MnSb/n-GaAs contacts
    Van Roy, W
    Roelfsema, RFB
    Liu, ZY
    Akinaga, H
    Miyanishi, S
    Manago, T
    Borghs, G
    De Boeck, J
    [J]. JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 852 - 856
  • [37] STUDY OF CYCLOTRON-RESONANCE-INDUCED CONDUCTIVITY IN N-GAAS
    BLUYSSEN, HJA
    MAAN, JC
    TAN, TB
    WYDER, P
    [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 749 - 760
  • [38] Regrowth of a GaAs layer for n-GaAs ohmic contacts
    [J]. 1600, (71):
  • [39] USING THE FARADAY-EFFECT TO STUDY NONUNIFORMITY IN N-GAAS
    KARTAVYKH, AV
    MILVIDSKII, MG
    YUROVA, ES
    [J]. INDUSTRIAL LABORATORY, 1988, 54 (07): : 748 - 751
  • [40] A BRILLOUIN SCATTERING STUDY OF ACOUSTOELECTRIC DOMAIN FORMATION IN N-GAAS
    SPEARS, DL
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) : 499 - &
12345