Excitonic transfer in coupled InGaAs/GaAs quantum well to InAs quantum dots

被引：26
|
作者：
Mazur, Yu. I. [1 ]
Liang, B. L.
Wang, Zh. M.
Guzun, D.
Salamo, G. J.
Zhuchenko, Z. Ya.
Tarasov, G. G.
机构：
[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[2] Natl Acad Sci, Inst Semicond Phys, UA-03028 Kiev, Ukraine
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2360914
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Peculiar mechanism of carrier transfer, excitonic trapping, from quantum well (QW) states to quantum dot (QD) states is clearly observed for the intentionally designed strained InAs:In0.3Ga0.7As/GaAs QD:QW structure. This transfer occurs very efficient at low excitation densities and low temperatures and explains the excitation density and nonmonotonic temperature dependences of the QW photoluminescence. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Direct observation of excitonic polaron in InAs/GaAs quantum dots
    Gong, Ming
    Chen, Geng
    He, Lixin
    Li, Chuan-Feng
    Tang, Jian-Shun
    Sun, Fang-Wen
    Niu, Zhi-Chuan
    Huang, She-Song
    Xiong, Yong-Hua
    Ni, Hai-Qiao
    Guo, Guang-Can
    EPL, 2010, 90 (03)
  • [22] Decay dynamics of excitonic polarons in InAs/GaAs quantum dots
    Werner, S.
    Reparaz, J. S.
    Wagner, M. R.
    Zimmer, P.
    Ledentsov, N. N.
    Kabuss, J.
    Dachner, M. R.
    Richter, M.
    Knorr, A.
    Thomsen, C.
    Hoffmann, A.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (07)
  • [23] Exciton thermal escape in symmetric InAs quantum dots in InGaAs/GaAs well structures
    Espinolal, J. L. Casas
    Torchynska, T. V.
    Polupan, G.
    Sierra, R. Pena
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2, 2007, 4 (02): : 379 - +
  • [24] Emission of InAs quantum dots embedded in InGaAs/InAlGaAs/GaAs quantum wells
    Tamayo, R. Cisneros
    Moreno, I. J. Guerrero
    Polupan, G.
    Torchynska, T. V.
    Gomez, J. Palacios
    JOURNAL OF LUMINESCENCE, 2014, 149 : 1 - 6
  • [25] Coupled InAs/GaAs quantum dots with well-defined electronic shells
    Fafard, S
    Spanner, M
    McCaffrey, JP
    Wasilewski, ZR
    APPLIED PHYSICS LETTERS, 2000, 76 (16) : 2268 - 2270
  • [26] Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
    Hospodkova, A.
    Hulicius, E.
    Oswald, J.
    Pangrac, J.
    Mates, T.
    Kuldova, K.
    Melichar, K.
    Simecek, T.
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 (582-585) : 582 - 585
  • [27] Thermal Activation of Carriers in InGaAs/InAs/GaAs Quantum Dots
    Nah, Jongbum
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (01) : 127 - 130
  • [28] Memory characteristics of InAs quantum dots embedded in GaAs quantum well
    Kannan, E. S.
    Kim, Gil-Ho
    Ritchie, D. A.
    APPLIED PHYSICS LETTERS, 2009, 95 (14)
  • [29] High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure diode laser operation
    Walter, G
    Chung, T
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2002, 80 (07) : 1126 - 1128
  • [30] Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs-GaAs-InGaAs-InAs heterostructure laser
    Chung, T
    Walter, G
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2001, 79 (27) : 4500 - 4502
12345