15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips

被引：0

作者：

Si, Xin ^{[1
]}

Tu, Yung-Ning ^{[1
]}

Huang, Wei-Hsing ^{[1
]}

Su, Jian-Wei ^{[1
]}

Lu, Pei-Jung ^{[1
]}

Wang, Jing-Hong ^{[1
]}

Liu, Ta-Wei ^{[1
]}

Wu, Ssu-Yen ^{[1
]}

Liu, Ruhui ^{[1
]}

Chou, Yen-Chi ^{[1
]}

Zhang, Zhixiao ^{[1
]}

Sie, Syuan-Hao ^{[1
]}

Wei, Wei-Chen ^{[1
]}

Lo, Yun-Chen ^{[1
]}

Wen, Tai-Hsing ^{[1
]}

Hsu, Tzu-Hsiang ^{[1
]}

Chen, Yen-Kai ^{[1
]}

Shih, William ^{[1
]}

Lo, Chung-Chuan ^{[1
]}

Liu, Ren-Shuo ^{[1
]}

Hsieh, Chih-Cheng ^{[1
]}

Tang, Kea-Tiong ^{[1
]}

Lien, Nan-Chun ^{[3
]}

Shih, Wei-Chiang ^{[3
]}

He, Yajuan ^{[2
]}

Li, Qiang ^{[2
]}

Chang, Meng-Fan ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Hsinchu, Taiwan

[2] Univ Elect Sci & Technol China, Chengdu, Peoples R China

[3] M31 Technol, Hsinchu, Taiwan

来源：

2020 IEEE INTERNATIONAL SOLID- STATE CIRCUITS CONFERENCE (ISSCC) | 2020年

关键词：

D O I：

10.1109/isscc19947.2020.9062995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：246 / +

页数：3

共 24 条

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