Thienothiophene-benzotriazole-based semicrystalline linear copolymers for organic field effect transistors

被引：9

作者：

Yum, Seungjib ^{[1
]}

An, Tae Kyu ^{[2
]}

Wang, Xiaowei ^{[1
]}

Uddin, Mohammad Afsar ^{[1
]}

Nguyen, Thanh Luan ^{[1
]}

Xu, Shuhao ^{[1
]}

Ryu, Hwasook ^{[1
]}

Kim, Yu Jin ^{[2
]}

Hwang, Sungu ^{[1
]}

Park, Chan Eon ^{[2
]}

Woo, Han Young ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Cogno Mech Engn, Dept Nanofus Engn, Miryang 627706, South Korea

[2] Pohang Univ Sci & Technol, Dept Chem Engn, Polymer Res Inst, POSTECH Organ Elect Lab, Pohang 790784, Gyungbuk, South Korea

来源：

PURE AND APPLIED CHEMISTRY | 2014年 / 86卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

ICFPAM-2013; optoelectronics; organic field-effect transistors; semiconductors; X-ray diffraction; CHARGE-CARRIER MOBILITY; POLYMER SEMICONDUCTORS; DESIGN; CELLS;

D O I：

10.1515/pac-2014-0205

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A series of thienothiophene-benzotriazole-based semicrystalline copolymers, PTTBTz, PTTBTz-F, and PTTBTz-OR, were synthesized by considering chain linearity, planarity and inter-chain packing by virtue of non-covalent attractive interaction. Fluorine and alkoxy substituents were introduced to modulate the intra- and inter-chain coulombic interactions and crystalline ordering. The fluorine and alkoxy-substituted PTTBTz-F and PTTBTz-OR showed pronounced inter-chain packing with edge-on orientation confirmed by UV-vis absorption and X-ray diffraction measurements. The well-resolved diffraction patterns were obtained for PTTBTz-F and PTTBTz-OR, showing (100)similar to(500) inter-lamellar scattering peaks (d-spacing, 17 similar to 18 angstrom) in the out-of-plane direction and a pi-pi stacking peak (d-spacing, 3.5 similar to 4.1 angstrom) in the in-plane direction. Organic field effect transistor (OFET) devices were fabricated with a bottom gate and top contact geometry. PTTBTz-F (mu(h) = 4.49 x 10(-2) cm(2) V-1 s(-1), on/off ratio = 1.13 x 107) and PTTBTz-OR (mu(h) = 8.39 x 10(-3) cm(2) V-1 s(-1), on/off ratio = 2.98 x 104) showed nearly 3 and 2 orders of magnitude higher hole mobility upon annealing at 305 and 260 degrees C, with compared to the unsubstituted PTTBTz.

引用

页码：1293 / 1302

页数：10

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