Successive segregation in laser-crystallized poly-SiGe thin films

被引：5
|
作者：
Weiman, M.
Nickel, N. H.
Sieber, I.
Yan, B.
机构：
[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany
[2] United Solar Ovon Corp, Troy, MI 48084 USA
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期
关键词：
crystallization; Raman spectroscopy;
D O I：
10.1016/j.jnoncrysol.2005.10.059
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Polycrystalline silicon-germanium (poly-SiGe) thin films on glass substrates, crystallized with multiple number of laser pulses, were characterized with energy dispersive X-ray and Raman spectroscopy. Strong lateral segregation was observed for laser-crystallized poly-Si1-xGex with 0.33 < x < 0.7, causing the local Ge content to differ by as much as 40% from the average value. The segregation manifests itself in the appearance of well-resolved peaks in the Raman phonon modes. It is shown that the segregation in the samples evolves successively with increasing number of laser pulses. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：1259 / 1262
页数：4
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