Si(001) c(4 x 2)-p(2 x 2) surface phase transitions induced by electric fields and doping

被引：3
|
作者：
Schmidt, W. G. [1 ]
Seino, K. [1 ]
机构：
[1] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany
来源：
CURRENT APPLIED PHYSICS | 2006年 / 6卷 / 03期
关键词：
density functional theory; silicon surface; scanning tunneling microscopy; phase transition;
D O I：
10.1016/j.cap.2005.11.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Density functional calculations on the relative stability of c(4 x 2) and p(2 x 2) reconstructed Si(001) surfaces exposed to external electric fields and charge injection are presented. Electric fields parallel to the [0 0 1] direction or electrons inserted into surface states are found to favor the p(2 x 2) over the c(4 x 2) reconstruction. This explains recent experimental findings for Si and Ge(001). (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：331 / 333
页数：3
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