Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony (vol 145, pg 668, 1994)

被引：1

作者：

Yamamoto, K ^{[1
]}

Asahi, H ^{[1
]}

Gonda, S ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 182卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(97)00434-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：227 / 229

页数：3

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