Metalorganic molecular beam epitaxy and etching of GaAs and GaSb using trisdimethylaminoarsenic and trisdimethylaminoantimony (vol 145, pg 668, 1994)

被引：1

作者：

Yamamoto, K ^{[1
]}

Asahi, H ^{[1
]}

Gonda, S ^{[1
]}

机构：

[1] OSAKA UNIV,INST SCI & IND RES,IBARAKI,OSAKA 567,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 182卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0248(97)00434-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：227 / 229

页数：3

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[1] METALORGANIC MOLECULAR-BEAM EPITAXY AND ETCHING OF GAAS AND GASB USING TRISDIMETHYLAMINOARSENIC AND TRISDIMETHYLAMINOANTIMONY
ASAHI, H
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INOUE, K
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ASAMI, K
MIKI, K
GONDA, S
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 668 - 674
[2] Etching of GaSb with trisdimethylaminoantimony and triisopropylantimony in a metalorganic molecular beam epitaxy chamber
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Asahi, H
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[3] Metalorganic molecular beam epitaxy and etching of AlGaSb using trisdimethylaminoantimony
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[4] Metalorganic molecular beam epitaxy growth and etching of GaSb on flat and high-index surfaces using trisdimethylaminoantimony
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Asahi, H
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[5] In-situ selective area etching of GaAs in metalorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic
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[6] Low temperature etching of GaAs substrates and improved morphology of GaAs grown by metalorganic molecular beam epitaxy using trisdimethylaminoarsenic and triethylgallium
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[7] LOW-TEMPERATURE ETCHING OF GAAS SUBSTRATES AND IMPROVED MORPHOLOGY OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRISDIMETHYLAMINOARSENIC AND TRIETHYLGALLIUM
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ASAHI, H
LIU, XF
HIGASHIWAKI, M
VILLAFLOR, AB
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[8] METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH-CHARACTERISTICS OF GAAS USING TRIETHYLGALLIUM AND TRISDIMETHYLAMINOARSENIC
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[9] ETCHING EFFECT ON METAL-ORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF GASB USING TRIETHYLGALLIUM AND TRISDIMETHYLAMINOANTIMONY
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[10] In-situ selective area etching of GaAs in metallorganic molecular beam epitaxy chamber using trisdimethylaminoarsenic
Osaka Univ, Osaka, Japan
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 7 (3814-3818):

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