Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE

被引：0

作者：

Taniyasu, Y

Watanabe, Y

Lim, DH

Jia, AW

Shimotomai, M

Kato, Y

Kobayashi, M

Yoshikawa, A

Takahashi, K

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

[2] Teikyo Univ Sci & Technol, Dept Elect & Informat Sci, Yamanashi 4090193, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<397::AID-PSSA397>3.0.CO;2-V

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic InGaN/GaN heterostructures were grown on GaAs(001) substrates by MOVPE. X-ray reciprocal space mapping (RSM) measurements were used to investigate the structural defects. It was revealed that the cubic InGaN layers contained high density stacking faults parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN [111] directions. The hexagonal domains were preferentially oriented to the-cubic InGaN [111]A directions rather than the [111] B directions. It was clarified that the cubic InGaN layer was anisotropically strained; and this would be originated from the anisotropic mixing of the hexagonal phase in the cubic InGaN epilayers.

引用

页码：397 / 400

页数：4

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