Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices

被引:0
|
作者
Cabarrocas, PRI [1 ]
Morral, AFI [1 ]
Lebib, S [1 ]
Poissant, Y [1 ]
机构
[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UMR 7647, F-91128 Palaiseau, France
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中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Powder formation in silane plasmas has been considered as a technology drawback because it might lead to the formation of macroscopic defects in the deposited layers. Here we summarize our recent efforts in controlling the formation of powder precursors, in particular, nanocrystalline silicon particles, aiming at their incorporation in the films. Indeed, the incorporation of clusters and crystallites along with SiHx with improved structure and transport properties with respect to standard amorphous silicon films.
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页码:359 / 367
页数:9
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