Influence of graphene thickness and grain boundaries on MoS2 wrinkle nanostructures

被引:9
|
作者
Kim, Seon Joon [1 ]
Kwon, Ohmin [2 ]
Kim, Dae Woo [1 ]
Kim, Jihan [2 ,3 ]
Jung, Hee-Tae [1 ,3 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn Plus BK 21, Natl Res Lab Organ Optoelect Mat, Daejeon 34141, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Chem & Biomol Engn Plus BK 21, Daejeon 34141, South Korea
[3] Korea Adv Inst Sci & Technol, Inst Nanocentury, Daejeon 34141, South Korea
基金
新加坡国家研究基金会;
关键词
LARGE-AREA; SURFACE; PERFORMANCE; FILMS; ELECTRODES; SUBSTRATE; ADHESION; CVD;
D O I
10.1039/c8cp02460j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Controlling wrinkle nanostructures of two-dimensional materials is critical for optimizing the material properties and device performance. In this study, we demonstrated the in situ synthesis of large-area MoS2 wrinkles on graphene by chemical-vapor-deposition-assisted sulfurization, and investigated the influence of graphene thickness and grain structures on the feature dimensions of MoS2 wrinkle nanostructures. The height, width, and overall surface roughness of the MoS2 wrinkles diminish as the number of graphene layers increases, which was further verified by determining the binding energy of graphene layers by density functional theory calculations. Furthermore, the feature dimensions of MoS2 wrinkle nanostructures were also influenced by graphene domain boundaries because of the difference in graphene nucleation density. This may be attributed to the influence of the mechanical properties of graphene substrates on the overall feature dimensions of MoS2 wrinkles, which are directly correlated with the interfacial adhesion energy. We believe that our findings may contribute toward the controllable synthesis of MoS2 wrinkle nanostructures and other two-dimensional materials used for high-performance devices.
引用
收藏
页码:17000 / 17008
页数:9
相关论文
共 50 条
  • [1] Effect of graphene grain boundaries on MoS2/graphene heterostructures
    张悦
    张祥喆
    邓楚芸
    葛奇
    黄俊杰
    卢捷
    林高翔
    翁泽锴
    张学骜
    蔡伟伟
    [J]. Chinese Physics B, 2020, 29 (06) : 61 - 65
  • [2] Effect of graphene grain boundaries on MoS2/graphene heterostructures
    Zhang, Yue
    Zhang, Xiangzhe
    Deng, Chuyun
    Ge, Qi
    Huang, Junjie
    Lu, Jie
    Lin, Gaoxiang
    Weng, Zekai
    Zhang, Xueao
    Cai, Weiwei
    [J]. CHINESE PHYSICS B, 2020, 29 (06)
  • [3] Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
    Liu, Xiaolong
    Balla, Itamar
    Bergeron, Hadallia
    Hersam, Mark C.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (37): : 20798 - 20805
  • [4] Charging effect at grain boundaries of MoS2
    Yan, Chenhui
    Dong, Xi
    Li, Connie H.
    Li, Lian
    [J]. NANOTECHNOLOGY, 2018, 29 (19)
  • [5] Hydrogen on hybrid MoS2/graphene nanostructures
    Maniadaki, Aristea E.
    Kopidakis, Georgios
    [J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2016, 10 (06): : 453 - 457
  • [6] Effects of buried grain boundaries in multilayer MoS2
    Ludwig, Jonathan
    Mehta, Ankit Nalin
    Mascaro, Marco
    Celano, Umberto
    Chiappe, Daniele
    Bender, Hugo
    Vandervorst, Wilfried
    Paredis, Kristof
    [J]. NANOTECHNOLOGY, 2019, 30 (28)
  • [7] Mechanical Fracture of Bilayer MoS2 with Grain Boundaries
    Wang, Wenwen
    Zhao, Hao
    Liu, Hong
    Wang, Lu
    Li, Youyong
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (41): : 17692 - 17698
  • [8] Optical visualization of MoS2 grain boundaries by gold deposition
    Sun, Lulu
    Zheng, Jian
    [J]. SCIENCE CHINA-MATERIALS, 2018, 61 (09) : 1154 - 1158
  • [9] Anomalous wrinkle propagation in polycrystalline graphene with tilt grain boundaries
    Zhao, Zihui
    Wang, Yafei
    Wang, Changguo
    [J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2023, 25 (05) : 3681 - 3694
  • [10] Correlation of grain orientations and the thickness of gradient MoS2 films
    Chang, Hui-Ping
    Hofmann, Mario
    Hsieh, Ya-Ping
    Chen, You-Sheng
    Lin, Jauyn Grace
    [J]. RSC ADVANCES, 2021, 11 (54) : 34269 - 34274