Anomalous wrinkle propagation in polycrystalline graphene with tilt grain boundaries

被引:0
|
作者
Zhao, Zihui [1 ,2 ]
Wang, Yafei [3 ]
Wang, Changguo [1 ,2 ]
机构
[1] Harbin Inst Technol, Natl Key Lab Sci & Technol Adv Composites Special, Harbin 150080, Peoples R China
[2] Harbin Inst Technol, Ctr Composite Mat & Struct, Harbin 150001, Peoples R China
[3] Fudan Univ, Inst Mech & Comp Engn, Dept Aeronaut & Astronaut, 220 Handan Rd, Shanghai 200433, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
INTRINSIC STRENGTH; WAVE-PROPAGATION; SIMULATIONS; TRANSPORT; BEHAVIOR; SHEETS;
D O I
10.1039/d2cp05067f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Understanding the propagation of dynamic wrinkles in polycrystalline graphene with grain boundaries (GBs) is critical to the practical application of graphene-based nanodevices. Although wrinkle propagation behavior in pristine graphene (PG) and some defect-containing graphene samples have been investigated, there are no studies on the dynamic behavior of graphene with tilt GBs. Here, nine tilt GBs are constructed in graphene, and molecular dynamics (MD) simulations are performed to investigate anomalous wrinkle propagation. The MD simulation results show that a larger misorientation angle alpha first enhances the shielding effect of tilt GBs on wrinkle propagation before it weakens. The maximum Delta z root mean square (RMS) shows that a greater misorientation angle alpha first increases the maximum RMS of the GB region (R-GB) before it then decreases, while the maximum RMS of R-80 exhibits the opposite trend. Moreover, approximately 96% of the C-60 kinetic energy is converted into kinetic and potential energies in graphene, and the potential energy in graphene presents two evolution modes. Phase diagrams are plotted to study the effect of the distance d(1) and rotation angle beta on the wrinkle propagation and sensitivity of the maximum RMS value to d(1). It is expected that our results can provide a fundamental understanding of defect engineering and guidelines to design protectors, energy absorbers, and defect detectors in nanodevices.
引用
收藏
页码:3681 / 3694
页数:14
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