In situ and real-time metrology during rinsing of micro- and nano-structures

被引:9
|
作者
Yan, Jun [1 ]
Dhane, Kedar [1 ]
Vermeire, Bert [2 ]
Shadman, Farhang [1 ]
机构
[1] Univ Arizona, Dept Environm Chem & Engn, Tucson, AZ 85721 USA
[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
关键词
Wafer rinsing; Cleaning; Sensor; Metrology; Water usage; Rinse model; WATER;
D O I
10.1016/j.mee.2008.10.014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new technology, called electro-chemical residue sensor (ECRS), has been developed for the in situ and real-time measurement of the residual impurities left on the wafer surface and in the fine structures of patterned wafers during typical rinse processes. The key components of this technology, which consist of the sensor hardware and a process model, are described. The testing results of the ECRS show that the residual impurity concentration is significantly different from what is typically provided by the bulk water resistivity, which is usually employed for determining the progress of the rinse. As a case study, the new metrology method has been applied to the removal of sulfate ions from patterned wafers; the importance of various surface interactions, charge effects, and transport processes is determined. Two examples of the use of the ECRS for the development of novel rinse recipes to reduce water usage are also discussed. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:199 / 205
页数:7
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