Towards spectroscopy of a few silicon nanocrystals embedded in silica

被引：2
|
作者：
Gruen, M. [1 ]
Miska, P. [1 ]
Neu, E. [2 ]
Steinmetz, D. [2 ]
Montaigne, F. [1 ]
Rinnert, H. [1 ]
Becher, C. [2 ]
Vergnat, M. [1 ]
机构：
[1] Nancy Univ, CNRS, LPM, F-54506 Vandoeuvre Les Nancy, France
[2] Univ Saarland, Fachrichtung Tech Phys 7 3, D-66041 Saarbrucken, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 41卷 / 06期
关键词：
Silicon nanocrystals; Lithography; Photoluminescence spectroscopy; Single object analysis; LIGHT-EMISSION; PHOTOLUMINESCENCE; SIO2; DOT;
D O I：
10.1016/j.physe.2008.08.005
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This work aims at optical isolation of a few silicon nanocrystals (Si-NCs) embedded in silica. We rely on realization of a SiO single layer followed by annealing under vacuum to generate Si-NCs. We first report on optimization of luminescence of single Si-NC layer in SiO2 thin him. An optimum of photoluminescence signal was found for annealing at 1050 degrees C for 95 min. Then, in order to optically isolate single Si-NCs, lithographic processes such as creation of aluminum masks have been employed. We discuss the challenges and the chances of measuring a photoluminescence signal from few Si-NCs. (C) 2008 Published by Elsevier B.V.
引用
收藏
页码：998 / 1001
页数：4
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