Improved behavioral and design model of an Nth-order charge pump

被引：25
|
作者：
Palumbo, G [1 ]
Barniol, N
Bethaoui, M
机构：
[1] Univ Catania, Dipartimento Elettr Elettron & Sistemist, I-95125 Catania, Italy
[2] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-FUNDAMENTAL THEORY AND APPLICATIONS | 2000年 / 47卷 / 02期
关键词：
analog integrated circuits; integrated circuit design; modeling; voltage multipliers;
D O I：
10.1109/81.828583
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An equivalent RC to model the dynamic behavior of a charge pump which takes into account the parasitic capacitances is presented. From the model, simple design equations to allow a pencil and paper design equation are developed. The model proposed was validated by means of Spice simulation and typically shows errors lower than 15%.
引用
收藏
页码：264 / 268
页数：5
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