Ultra-low magnetic damping in epitaxial Li0.5Fe2.5O4 thin films

被引:15
|
作者
Zheng, Xin Yu [1 ]
Riddiford, Lauren J. [1 ]
Wisser, Jacob J. [1 ]
Emori, Satoru [2 ]
Suzuki, Yuri [1 ]
机构
[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[2] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA
基金
美国国家科学基金会;
关键词
32;
D O I
10.1063/5.0023077
中图分类号
O59 [应用物理学];
学科分类号
摘要
The realization of more energy efficient nanomagnetic information devices relies on the existence of magnetic insulators capable of supporting pure spin currents in the absence of a dissipative charge current. Currently, there is a limited number of thin-film magnetic insulators with low magnetic damping. Li0.5Fe2.5O4 (LFO) is well known to possess the lowest damping among the bulk spinel structure oxides, but, thus far, LFO thin films have not lived up to these expectations. Here, we demonstrate low magnetic damping (even lower than typical bulk values) and bulk magnetization in 3 nm thick epitaxial LFO thin films. At room temperature, SQUID magnetometry shows a high saturation magnetization of 320 kA/m, and broadband ferromagnetic resonance measurements yield an effective Gilbert damping parameter of 1.3 x 10(-3), which is among the lowest reported for ferro-/ferrimagnetic films of comparable thickness. Our results show the promise of LFO as a candidate material for spin current-based spintronics. Published under license by AIP Publishing.
引用
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页数:5
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