Molecular dynamics simulation of laser ablation of silicon

被引：35
|
作者：
Herrmann, RFW
Gerlach, J
Campbell, EEB
机构：
[1] GMD,FIRST,D-12489 BERLIN,GERMANY
[2] MAX BORN INST,D-12474 BERLIN,GERMANY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 122卷 / 03期
关键词：
D O I：
10.1016/S0168-583X(96)00565-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Laser ablation of silicon surfaces has been investigated by molecular dynamics (MD) simulations. Results for laser pulse lengths of 200 fs, 1 ps and 5 ps have been obtained for different pulse energy densities. Structures of approximately 100 Angstrom x 100 Angstrom were simulated. In some cases the impact of up to five successive laser pulses was studied. Calculations of up to 20 ps after the onset of the laser have been performed. The major part of the atoms is removed on a picosecond time scale even for fs laser pulses. Pressure waves running through the crystal could be traced. Recrystallization of melted silicon leads to irregular crystalline structures around the ablated hole. Redeposition of atoms on the surface could be observed.
引用
收藏
页码：401 / 404
页数：4
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