Design of Reconfigurable Inductorless RF VCO in 130nm CMOS

被引：1
|
作者：
Haddad, Fayrouz [1 ]
Ghorbel, Imen [1 ]
Rahajandraibe, Wenceslas [1 ]
机构：
[1] Univ Toulon & Var, Aix Marseille Univ, CNRS, UMR7334,IM2NP, Marseille, France
来源：
BIONANOSCIENCE | 2019年 / 9卷 / 02期
关键词：
LC-VCO; Active inductor; RF; CMOS; IoT; Multistandard; low-power;
D O I：
10.1007/s12668-019-0603-2
中图分类号：
TB3 [工程材料学]; R318.08 [生物材料学];
学科分类号：
0805 ; 080501 ; 080502 ;
摘要：
The need for low-power and low-cost connected devices supporting several communication standards continues to increase with the rising demand in Internet of Things (IoT) applications. This paper presents a reconfigurable inductorless radiofrequency (RF) voltage-controlled oscillator (VCO) capable to work across various frequency bands with a low area. This VCO has an inductor-capacitor (LC) topology though using an active inductor based on a gyrator-C structure. It uses n-bits controlled CMOS inverters for coarse frequency tuning and diode varactor for fine frequency tuning. Implemented in 130-nm CMOS technology, the VCO can cover a frequency tuning of 1.22-2.6GHz. It achieves a phase noise of -87dBc/Hz at 1MHz with a power consumption of 4mW from 1.1-V supply. The active die area is only 54x59m(2).
引用
收藏
页码：285 / 295
页数：11
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