Hot-wire chemical vapor growth and characterization of crystalline GeTe films

被引：12
|
作者：
Abrutis, A. [1 ]
Plausinaitiene, V. [1 ]
Skapas, M. [1 ]
Wiemer, C. [2 ]
Gawelda, W. [3 ]
Siegel, J. [3 ]
Rushworth, S. [4 ]
机构：
[1] Vilnius State Univ, Dept Gen & Inorgan Chem, LT-03225 Vilnius, Lithuania
[2] CNR, INFM MDM Lab, I-20041 Agrate Brianza, Italy
[3] CSIC, Inst Opt, Laser Proc Grp, E-28006 Madrid, Spain
[4] SAFC HiTech, Wirral CH62 3QF, Merseyside, England
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 02期
关键词：
Hot-wire CVD; Metalorganic chemical vapor deposition; Germanium telluride; Semiconducting materials; Phase change memory; CHANGE MEMORY APPLICATIONS; GE2SB2TE5; FILMS; DEPOSITION; MOCVD; PRAM;
D O I：
10.1016/j.jcrysgro.2008.10.038
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Films of germanium telluride (GeTe) were grown by chemical vapor deposition (CVD) using pulsed liquid injection/flash evaporation principle to introduce the metalorganic precursor vapors. Simple thermal CVD with no additional process activation and CVD employing hot-wire remote catalytic activation of the precursor decomposition process were investigated and compared. Ge(NMe(2))(4) and Te(iPr)(2) precursors in the form of diluted solutions in toluene were used as source materials for the depositions. Film composition was controlled changing the ratio of injected precursors, while the thickness was directly related to the number of injection pulses. Growth of GeTe films with a clearly better quality was demonstrated via the hot-wire-activated CVD process when compared to the standard thermal CVD. The influence of substrate temperature and deposition pressure on film crystallinity and morphology was studied. Reversible optical phase switching was demonstrated in 40-50nm thick GeTe films on Si/SiO(2) substrates. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：362 / 367
页数：6
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