Film properties of nitrogen-doped polycrystalline silicon for advanced gate material

被引：0
|
作者：
Woo, Sang Ho [1 ,2 ]
Kim, Yil Wook [3 ]
Um, Pyung Yong [3 ]
Lee, Hae-Min [1 ,2 ]
Kim, Chang-Koo [1 ,2 ]
机构：
[1] Ajou Univ, Dept Chem Engn, Suwon 443749, South Korea
[2] Ajou Univ, Div Energy Syst Res, Suwon 443749, South Korea
[3] Eugene Technol Co Ltd, Yangji Myun 449824, Yongin, South Korea
来源：
KOREAN JOURNAL OF CHEMICAL ENGINEERING | 2009年 / 26卷 / 03期
关键词：
N-doped Si; Low Pressure Chemical Vapor Deposition; Grain Size; Surface Roughness; CHEMICAL-VAPOR-DEPOSITION; SILANE; MEMORY;
D O I：
10.1007/s11814-009-0137-3
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Deposition of N-doped poly-Si films from SiH4 and NH3 using a single wafer type low pressure chemical vapor deposition (LPCVD) system was investigated to improve the grain size reduction and the grain size distribution. The deposition rate and surface roughness of N-doped Si were greatly affected by the NH3/SiH4 ratio such that they decreased with increasing NH3/SiH4 ratio. X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements revealed that with increasing NH3/SiH4 ratio, the size of the grains was decreased and the grains size distribution became uniform. Finally, we successfully obtained N-doped poly-Si films having uniform grain size of approximately 6 nm.
引用
收藏
页码：824 / 827
页数：4
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