Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy

被引：7
|
作者：
Kim, JW
Son, CS
Choi, IH
Park, YK
Kim, YT
Ambacher, O
Stutzmann, M
机构：
[1] Korea Inst Sci & Technol, Semicond Mat Lab, Seoul 130650, South Korea
[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[3] Korea Univ, Dept Mat Sci, Seoul 132701, South Korea
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 208卷 / 1-4期
关键词：
AlxGa1-xN; Rutherford backscattering spectroscopy; molecular beam epitaxy; X-ray diffraction; auger electron microscopy; atomic force microscopy;
D O I：
10.1016/S0022-0248(99)00483-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Structural properties of AlxGa1-xN epilayers grown on (0 0 0 1) sapphire substrate by molecular beam epitaxy are investigated in the range of A1N molar fraction from 0.16 to 0.76. The A1N molar fraction estimated by X-ray diffraction agrees well with that of Rutherford backscattering spectroscopy, showing a good linear relationship. The uniform Auger electron spectroscopy depth profile and linear dependence of average atomic concentration of all the constituents of AlxGa1-xN epilayers on A1N molar fraction imply that the growth of AlxGa1-xN epilayers with variation of A1N molar fraction is well controlled without the compositional fluctuation in depth of the epilayer. It is observed by atomic force microscopy that the surface grain shape of AlxGa1-xN epilayer changes from roundish to a coalesced one with increasing A1N molar fraction. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：37 / 41
页数：5
相关论文
共 50 条
  • [41] High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy
    Fernández, S
    Naranjo, FB
    Calle, F
    Sánchez-García, MA
    Calleja, E
    Vennegues, P
    Trampert, A
    Ploog, KH
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2136 - 2138
  • [42] Plasma cleaning and nitridation of sapphire substrates for AlxGa1-xN epitaxy as studied by ARXPS and XPD
    SeelmannEggebert, M
    Zimmermann, H
    Obloh, H
    Niebuhr, R
    Wachtendorf, B
    [J]. GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 193 - 198
  • [43] Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
    Yu, G
    Ishikawa, H
    Umeno, M
    Egawa, T
    Watanabe, J
    Jimbo, T
    Soga, T
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (18) : 2202 - 2204
  • [44] In situ Eu doping into AlxGa1-xN grown by organometallic vapor phase epitaxy to improve luminescence properties
    Koizumi, Atsushi
    Kawabata, Kosuke
    Lee, Dong-gun
    Nishikawa, Atsushi
    Terai, Yoshikazu
    Ofuchi, Hironori
    Honma, Tetsuo
    Fujiwara, Yasufumi
    [J]. OPTICAL MATERIALS, 2015, 41 : 75 - 79
  • [45] GaN and AlxGa1-xN molecular beam epitaxy monitored by reflection high-energy electron diffraction
    Grandjean, N
    Massies, J
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (13) : 1816 - 1818
  • [46] Si-doped AlxGa1-xN(0.56≤ x ≤1) layers grown by molecular beam epitaxy with ammonia -: art. no. 132106
    Borisov, B
    Kuryatkov, V
    Kudryavtsev, Y
    Asomoza, R
    Nikishin, S
    Song, DY
    Holtz, M
    Temkin, H
    [J]. APPLIED PHYSICS LETTERS, 2005, 87 (13) : 1 - 3
  • [47] Self-assembled AlxGa1-xN nanorods grown on Si(001) substrates by using plasma-assisted molecular beam epitaxy
    Park, Young S.
    Hwang, B. R.
    Lee, J. C.
    Im, Hyunsik
    Cho, H. Y.
    Kang, T. W.
    Na, J. H.
    Park, C. M.
    [J]. NANOTECHNOLOGY, 2006, 17 (18) : 4640 - 4643
  • [48] Gas source molecular beam epitaxy of high quality AlxGa1-xN (0≤x≤1) on Si(111)
    Nikishin, S
    Kipshidze, G
    Kuryatkov, V
    Choi, K
    Gherasoiu, I
    de Peralta, LG
    Zubrilov, A
    Tretyakov, V
    Copeland, K
    Prokofyeva, T
    Holtz, M
    Asomoza, R
    Kudryavtsev, Y
    Temkin, H
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1409 - 1412
  • [49] Molecular beam epitaxy of GaN/AlxGa1-xN superlattices for 1.52-4.2 μm intersubband transitions
    Ng, HM
    Gmachl, C
    Chu, SNG
    Cho, AY
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 432 - 438
  • [50] Enhanced luminescence from AlxGa1-xN/AlyGa 1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia
    Nikishin, Sergey A.
    Borisov, Boris A.
    Garrett, Gregory A.
    Sarney, Wendy L.
    Sampath, Anand V.
    Shen, Hongen
    Wraback, Michael
    Holtz, Mark
    [J]. GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473
12345