Interdiffusion between InAs quantum dots and GaAs matrices

被引：11

作者：

Haga, T ^{[1
]}

Kataoka, M ^{[1
]}

Matsumura, N ^{[1
]}

Muto, S ^{[1
]}

Nakata, Y ^{[1
]}

Yokoyama, N ^{[1
]}

机构：

[1] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 8B期

关键词：

quantum dots; InAs; interdiffusion; Rutherford backscattering; ion channeling;

D O I：

10.1143/JJAP.36.L1113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The existence of interdiffusion between self-assembled lnAs quantum dots and a GaAs substrate has been investigated using ordinary Rutherford backscattering which is also useful for determining the value of the average InAs layer thickness. As a result, evidence for the diffusion of Ga atoms into the dot is obtained. Furthermore, spatial distribution of the disused Ga atoms in InAs dots is suggested.

引用

页码：L1113 / L1115

页数：3

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