RELIABILITY OF RF MEMS CAPACITIVE SWITCHES AND DISTRIBUTED MEMS PHASE SHIFTERS USING ALN DIELECTRIC

被引:11
|
作者
Fernandez-Bolanos, M. [1 ]
Tsamados, D. [1 ]
Dainesi, P. [1 ]
Ionescu, A. M. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Nanolab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1109/MEMSYS.2009.4805463
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The reliability and charging/discharging dynamics of wideband (1.5-14GHz) phase shifters made of MEMS capacitive switches using Aluminum Nitride (AlN) as dielectric are originally reported. Phase shifter lifetimes exceeding 10(9) cycles are achieved in hot-cycling (+5dBm RF power). Dynamic tests were done for the first time under ambient conditions (50% humidity) over 2x10(9) cycles with no major degradation of individual switches performances. It is demonstrated that the phase shifter is very robust (no permanent failure or stiction) and can withstand environmental effects as well as high temperature variations, without the need of expensive hermetical packaging. The excellent reliability is attributed to the slow dielectric charging (a square-root time law) and fast discharging mechanism of AlN (an exponential time law proposed and validated in our work). We extend the validity of charging and discharging models from single device to arrays of parallel MEMS capacitors.
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页码:638 / 641
页数:4
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