Buried p-type layers in mg-doped InN

被引：81
|
作者：
Anderson, P. A.
Swartz, C. H.
Carder, D.
Reeves, R. J.
Durbin, S. M. [1 ]
Chandril, S.
Myers, T. H.
机构：
[1] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand
[2] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 18期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2378489
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Variable magnetic field Hall effect, photoluminescence, and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. Early indications suggest the Mg acceptor level in InN may lie near 110 meV above the valence band maximum. The development of p-type doping techniques offers great promise for future InN based devices. (c) 2006 American Institute of Physics.
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页数：3
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