Near-field scanning optical microscopy for characterisation of photovoltaic materials

被引：1
|
作者：
van Dyk, EE [1 ]
Karoui, A [1 ]
La Rosa, AH [1 ]
Rozgonyi, G [1 ]
机构：
[1] Univ Port Elizabeth, Dept Phys, ZA-6031 Port Elizabeth, South Africa
来源：
CONFERENCE ON PHOTO-RESPONSIVE MATERIALS, PROCEEDINGS | 2004年
关键词：
D O I：
10.1002/pssc.200404848
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Near-field scanning optical microscopy (NSOM) enables nanometer scale studies of optical and opto-electronic properties. A NSOM setup has been designed and constructed to investigated carrier lifetime in the vicinity of extended defects such as grain boundaries and dislocations, as well as surface topography in photovoltaic materials. The benefits of the NSOM technique and the different modes employed are discussed. Some preliminary results are presented. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：2292 / 2297
页数：6
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