Influence of Al on the local structure of Nd-doped TiO2 thin films: A combined luminescence and X-ray absorption fine structure analysis

被引:7
|
作者
Murayama, Mariko [1 ,4 ,5 ]
Yoda, Kensaku [1 ]
Komuro, Shuji [2 ]
Nitani, Hiroaki [3 ]
Crowe, Iain F. [4 ,5 ]
Zhao, Xinwei [1 ]
机构
[1] Tokyo Univ Sci, Dept Phys, Tokyo 1628601, Japan
[2] Toyo Univ, Fac Engn & Sci, Kawagoe, Saitama 3508585, Japan
[3] High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan
[4] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England
[5] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England
关键词
Luminescence; Rare earth; Semiconductor; XAFS; Laser ablation; IONS; PHOTOLUMINESCENCE;
D O I
10.1016/j.mseb.2019.05.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Rare-earth related optical emission in oxide semiconductors is strongly influenced by the local co-ordination around the rare-earth centres. In this contribution, we examine the effect of aluminium co-doping on the local fine structure of neodymium-doped titanium dioxide (TiO2:Nd, TiO2:Nd-Al) thin films with single-phase anatase structure, via luminescence and X-ray absorption fine structure (XAFS) measurements. Increasing the concentration of Al in these materials leads to the co-ordination around Nd3+ ions being distorted, which in turn leads to an enhanced photoluminescence (PL) intensity. We explain this in terms of a distortion of the nearest neighbour oxygen bonds with Nd3+.
引用
收藏
页码:49 / 52
页数:4
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