Terahertz pulse emission from epitaxial n-InAs in a magnetic field

被引：7
|
作者：
Nevinskas, I [1 ]
Kadlec, F. [2 ]
Kadlec, C. [2 ]
Butkute, R. [1 ]
Krotkus, A. [1 ]
机构：
[1] Ctr Phys Sci & Technol, Sauletekio Al 3, LT-10257 Vilnius, Lithuania
[2] Czech Acad Sci, Inst Phys, Na Slovance 2, Prague 18221 8, Czech Republic
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2019年 / 52卷 / 36期
关键词：
terahertz emission; magnetic field; InAs; TEMPERATURE-DEPENDENCE; INDIUM ARSENIDE; RADIATION; GENERATION; INSB; ENHANCEMENT; SURFACES; POWER;
D O I：
10.1088/1361-6463/ab28e7
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Terahertz pulse emission from an epitaxial n-InAs layer placed in an external magnetic field was investigated using an unconventional line-of-sight geometrical layout. The highest terahertz pulse intensity was registered at 1.75 T, which is the lowest magnetic field strength reported for comparable cases. A simplified Drude-Lorentz model of carrier dynamics fits well the experimental results at low and moderate magnetic fields.
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页数：5
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