Magnetic field enhanced terahertz pulse emission from a femtosecond laser excited GaSb epitaxial layer

被引：3

作者：

Nevinskas, I. ^{[1
]}

Vizbaras, K. ^{[2
]}

Vizbaras, A. ^{[2
]}

Trinkunas, A. ^{[2
]}

Krotkus, A. ^{[1
]}

机构：

[1] Ctr Phys Sci & Technol, Sauletekio 3, LT-10222 Vilnius, Lithuania

[2] Brolis Semicond UAB, Moletu Pl 73, LT-14259 Vilnius, Lithuania

来源：

ELECTRONICS LETTERS | 2016年 / 52卷 / 19期

关键词：

gallium compounds; III-V semiconductors; semiconductor epitaxial layers; molecular beam epitaxial growth; terahertz wave generation; optical pulse generation; magneto-optical effects; semiconductor growth; terahertz wave devices; microwave photonics; magnetic field enhanced terahertz pulse emission; femtosecond laser excited epitaxial layer; molecular beam epitaxy; surface terahertz emitter; photoexcitation; optical-to-THz power conversion efficiency; THz emission; signal registration; line-of-sight geometry; wavelength; 1; 55; mum; GaSb-GaAs; GaAs; SEMICONDUCTOR SURFACES; POLARIZATION; RADIATION; INAS;

D O I：

10.1049/el.2016.2216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An undoped GaSb epitaxial layer has been grown on a GaAs substrate by molecular beam epitaxy. It has been found that GaSb could be a potential surface terahertz (THz) emitter photoexcited by 1.55 m femtosecond laser pulses since the maximum optical-to-THz power conversion efficiency is at around this wavelength. The THz field strength is 10 dB weaker as compared with that generated from narrow-gap InAs at these energies of quanta. Furthermore, the samples were exposed to a constant magnetic field which enhances THz emission and allows signal registration in the line-of-sight geometry.

引用

页码：1627 / U58

页数：3

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