Growth of perovskite type thin films by MBE

被引：0
|
作者：
Yoneda, Y
Okabe, T
Sakaue, K
Terauchi, H
机构：
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1996年 / 29卷
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Epitaxial ultrathin films of BaTiO3 have been prepared using molecular beam epitaxy on SrTiO3 (001) substrate. Since growth condition of these films was controlled as well as semiconductive film growth, the BaTiO3 films were characterized by X-ray diffraction even in the ultrathin range. The ultrathin BaTiO3 films were tetragonal phase and highly c-axis oriented single crystal of good film quality. Their tetragonality was much larger than the bulk value of BaTiO3, and decreases with increasing thickness. The epitaxial effect is discussed in terms of a critical thickness, as well as a fully strained layer of fine particles.
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页码：S652 / S655
页数：4
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