Nanoscale characterisation of electronic and spintronic nitrides and arsenides

被引：0

作者：

Fay, M. W. ^{[1
]}

Han, Y. ^{[1
]}

Edmonds, K. W. ^{[1
]}

Wang, K. ^{[1
]}

Campion, R. P. ^{[1
]}

Gallagher, B. L. ^{[1
]}

Foxon, C. T. ^{[1
]}

Hilton, K. P. ^{[1
]}

Masterton, A. ^{[1
]}

Wallis, D. ^{[1
]}

Balmer, R. S. ^{[1
]}

Uren, M. J. ^{[1
]}

Martin, T. ^{[1
]}

Brown, P. D. ^{[1
]}

机构：

[1] Univ Nottingham, Sch Mech Mat & Mfg Engn, Univ Pk, Nottingham NG7 2RD, England

来源：

EMAG-NANO 2005: IMAGING, ANALYSIS AND FABRICATION ON THE NANOSCALE | 2006年 / 26卷

关键词：

D O I：

10.1088/1742-6596/26/1/041

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The limits of applicability of the nanoscale spatial resolution analysis techniques of EFTEM, CBED and dark field imaging as applied to ohmic contacts to AlGaN/GaN and Mn distribution within Ga1-xMnxAs epilayers are considered. EFTEM can be limited by acquisition times necessitating the post processing of images to compensate for sample drift. Complementary technique of assessment are required to address problems of peak overlaps in energy loss spectra or signal to noise problems for low elemental concentrations. The use of 002 dark field imaging to appraise Ga1-xMnxAs epilayers is demonstrated.

引用

页码：175 / +

页数：2

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